Memory device from which dummy edge memory block is removed

ABSTRACT

A semiconductor memory device having an open bitline memory structure from which an edge dummy memory block is removed, the semiconductor memory device includes a memory block, an edge sense amplification block including a first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size, a central sense amplification block including a second sense amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different from the first size, a capacitor block electrically connected to the edge sense amplification block.

BACKGROUND OF THE INVENTION

Embodiments of the present inventive concept relate to semiconductormemory devices. More particularly, embodiments of the inventive conceptrelate to semiconductor memory devices from which a dummy edge memoryblock is removed.

Semiconductor memory devices may be classified or identified accordingmemory cell type and/or a number of layout or structure features. Somesemiconductor memory devices are classified or identified according tothe type (or structure) of their constituent bitline sense amplifier(BLSA). For example, semiconductor memory devices may be designated as8F2, 6F2, etc., in accordance with the structure of their constituentmemory cells, and may also be classified as an open BLSA type or afolded BLSA type according to the structure of their constituent BLSA.

The process of increasing the integration density of a semiconductordevice typically requires a reduction in respective component sizesand/or a more densely laid out arrangement of components. For example,in the context of memory cell type, the integration density of a 6F2type semiconductor memory device is greater than that of a 8F2 typesemiconductor memory device. In the context of BLSA structure, theintegration density of a folded BLSA type is greater than that of anopen BLSA type. However, when a 6F2 type memory cell structure is used,a folded BLSA type semiconductor memory device cannot be used, andinstead, an open BLSA type semiconductor memory device can be used.However, when the open BLSA type semiconductor memory device is used, adummy cell block must be included in the constituent semiconductormemory device, and this inclusion of a dummy cell block requiresadditional space on the chip and generally runs against efforts toincrease the integration density of the semiconductor device.

SUMMARY OF THE INVENTION

Embodiments of the present inventive concept provide a semiconductormemory device providing improved integration density despite theill-effect of necessarily including a dummy cell block.

According to an aspect of the inventive concept, there is provided asemiconductor memory device having an open bitline memory structure,comprising; a memory block comprising a memory cell arrangement, an edgesense amplification block comprising a first sense amplifier comprisinga first bitline, a first complementary bitline, and a firstamplification circuit comprising a first transistor having a first size,a central sense amplification block comprising a second sense amplifiercomprising a second bitline, a second complementary bitline, and asecond amplification circuit comprising a second transistor having asecond size different from the first size, and a capacitor blockelectrically connected to the edge sense amplification block.

According to another aspect of the inventive concept, there is provideda semiconductor memory device having an open bitline memory structure,comprising; an edge sense amplification block comprising a first senseamplifier connected to a first memory cell arrangement of an edge memoryblock, the first sense amplifier comprising a first equalization circuitconnected to a first power signal, a central sense amplification blockcomprising a second sense amplifier connected to a second memory cellarrangement of the edge memory block, the second sense amplifiercomprising a second equalization circuit connected to a second powersignal, and a power generation device that generates the first powersignal and the second power signal, wherein the first power signal isprovided to the first equalization circuit through a different signalpath than the second power signal is provided to the second equalizationcircuit.

According to another aspect of the inventive concept, there is provideda semiconductor memory device comprising an array block, wherein thearray block comprises a plurality of memory blocks, a plurality of senseamplification blocks, and at least one capacitor block, the plurality ofmemory blocks each comprise an edge memory block disposed proximate anedge of the array block, and a central memory block disposed within aninner portion of the array block, and the plurality of senseamplification blocks comprise an edge sense amplification block disposedbetween the capacitor block and the edge memory block, and a centralsense amplification block disposed between the edge memory block and thecentral memory block.

According to another aspect of the inventive concept, there is provideda semiconductor memory device having an open bitline memory structure,comprising; an edge sense amplification block arranged on an edge of anarray block and comprising a first sense amplifier connected between afirst bitline and a second bitline, a second sense amplification blockarranged within an inner portion of the array block and comprising asecond sense amplifier connected between a third bitline and a fourthbitline, a capacitor block comprising a capacitor connected to at leastone selected from a group consisting of the first bitline and the secondbitline, and a balance switch block arranged between the first senseamplification block and the second sense amplification block toelectrically connect the at least one selected from the group consistingof the first bitline and the second bitline to at least one selectedfrom another group consisting of the third bitline and the fourthbitline.

According to another aspect of the inventive concept, there is provideda method of fabricating a semiconductor memory device on a substrate,the method comprising; providing an arrangement of blocks a capacitorblock, a dummy edge block, an edge sense amplification block, an edgememory block, a central sense amplification block, and a central memoryblock, removing the dummy edge block, arranging the capacitor block atan edge of the substrate, arranging the central sense amplificationblock and the central memory block in an inner portion of the substrate,and arranging the edge sense amplification block and the edge memoryblock between the capacitor block and the central sense amplificationblock, wherein the edge sense amplification block comprises a firstsense amplifier including a first amplification circuit comprising afirst transistor having a first size, and the central senseamplification block has a layout configuration substantially the same asthe edge sense amplification block, and comprises a second senseamplifier including a second amplification circuit comprising a secondtransistor corresponding in a position within the second amplificationcircuit to a position of the first transistor within the firstamplification circuit and having a second size different from the firstsize.

BRIEF DESCRIPTION OF THE DRAWINGS

Exemplary embodiments of the inventive concept will be more clearlyunderstood from the following detailed description taken in conjunctionwith the accompanying drawings in which:

FIG. 1 is a block diagram of a semiconductor memory device according toan embodiment of the inventive concept;

FIG. 2 is a circuit diagram of an embodiment of the semiconductor memorydevice of FIG. 1;

FIGS. 3A and 3B are a plan view and a cross-sectional view of asemiconductor layout of a capacitor block of the semiconductor memorydevice of FIG. 2;

FIGS. 4A and 4B are circuits and layouts further illustrating theembodiment of the semiconductor memory device of FIG. 1;

FIGS. 5A and 5B are respectively a circuit diagram of a semiconductormemory device in which a transistor of an amplification circuit in afirst sense amplifier has a size different from that of a transistor ofan amplification circuit in a second sense amplifier, and related graphs(FIGS. 5(B)(a) and 5(B)(b)) showing the characteristics obtained due tothe use of transistors having different sizes;

FIG. 6 is a circuit diagram illustrating the use of different sizedtransistors in column selection circuits of a sense amplificationblocks;

FIG. 7 is a block diagram of a semiconductor memory device according toanother embodiment of the inventive concept;

FIG. 8 is a block diagram further illustrating the switching unitincluded in the semiconductor memory device of FIG. 7;

FIGS. 9A and 9B are circuit diagrams further illustrating embodiments offirst and second precharge voltage generation units included in thesemiconductor memory device of FIG. 8;

FIG. 9C illustrates another embodiment of the first precharge voltagegeneration unit of the semiconductor memory device of FIG. 8;

FIG. 10A is a circuit diagram of an embodiment of a semiconductor memorydevice including a second capacitor block connected to an equalizationcircuit;

FIG. 10B is a graph illustrating the effects of the second capacitorblock of FIG. 10A;

FIG. 11A is a plan view of an embodiment of a semiconductor layout ofthe second capacitor block;

FIG. 11B is a cross-sectional view of the semiconductor layout of thesecond capacitor block of FIG. 11A;

FIG. 12 is a block diagram of a semiconductor memory device includingfirst and second precharge voltage generation units and a secondcapacitor block;

FIG. 13 is a block diagram of a semiconductor memory device according toanother embodiment of the inventive concept;

FIG. 14 is a block diagram further illustrating the memory arrayincluded in the semiconductor memory device of FIG. 13;

FIG. 15 is a circuit diagram further illustrating in one embodiment thesemiconductor memory device of FIG. 14;

FIGS. 16A, 16B, and 16C are circuit diagrams of embodiments of a balanceswitch block included in the semiconductor memory device of FIG. 14; and

FIGS. 17A and 17B are waveform diagrams of control signals and thevoltage levels of bitlines.

DETAILED DESCRIPTION

The inventive concept will now be described more fully with reference tothe accompanying drawings in which exemplary embodiments of theinventive concept are shown. Throughout the written description anddrawings, like reference numbers and labels are used to denote like orsimilar elements.

FIG. (FIG.) 1 is a block diagram of a semiconductor memory device 10according to an embodiment of the inventive concept.

Referring to FIG. 1, the semiconductor memory device 10 according to theillustrated embodiment includes a plurality of memory cell blocks 110,120, and 130 and a plurality of sense amplification blocks 210, 220, and230. The memory cell blocks 110, 120, and 130 are arranged in analternating arrangement with the sense amplification blocks 210, 220,and 230. The “edge” sense amplification blocks 210 and 230 are arrangedat an edge of the semiconductor memory device 10 may have a differentstructure from that of the “central” (i.e., non-edge disposed) senseamplification block 220. Capacitor blocks 310 and 320 are also includedin the semiconductor memory device 10 and are arranged adjacent to theedge sense amplification blocks 210 and 230. Thus, FIG. 1 illustratesone example of an array block constituting the semiconductor memorydevice 10. So, it may be said that the single array block of FIG. 1includes the memory cell blocks 110, 120, and 130, the senseamplification blocks 210, 220, and 230, and the capacitor blocks 310 and320. Although not shown in FIG. 1, other example of a semiconductormemory device consistent with an embodiment of the inventive concept mayinclude multiple array blocks. When a dummy cell block (not shown) isremoved from the semiconductor memory device 10 during the fabricationprocess, a capacitance imbalance may occur between a bitline BL and acomplementary bitline BLB disposed in one of the memory cell blocks 110,120, and 130. Accordingly, the capacitor blocks 310 and 320 are includedin the semiconductor memory device 10 in order to compensate for thiscapacitance imbalance.

FIG. 2 is a circuit diagram further illustrating the embodiment of FIG.1.

Referring to FIG. 2, each of the sense amplification blocks 210, 220,and 230 includes a plurality of sense amplifiers (SAs). Each of thecapacitor blocks 310 and 320 includes a plurality of capacitors. Thecapacitors are arranged to prevent a capacitance imbalance between arespective bitline BL and complementary bitline BLB, and may thus bereferred to as balance capacitors. Each of the memory cell blocks 110,120, and 130 include an arrangement of memory cells disposed in relationto bitlines and wordlines.

Each of the SAs is connected to a capacitor and/or a memory array. Forexample, some of the SAs may be connected to memory cells in bothdirections. Alternatively, some of the SAs may be connected to memoryarrangements in one direction and may be connected to capacitors in theother direction. As shown in FIG. 1, a plurality of sense amplificationblocks may be arranged within an array block. The SAs included in edgesense amplification blocks (e.g., sense amplification blocks 210 and230) may be connected to the capacitors. Accordingly, the SAs of theedge sense amplification blocks 210 and 230 connected to the capacitorblocks 310 and 320 may have a different size than the SAs of centralsense amplification blocks (e.g., sense amplification block 220) whichare not connected to the capacitor blocks 310 and 320. For example, theSAs of the edge sense amplification blocks 210 and 230 may be sized tobe greater than the SAs of the central sense amplification block 220.Although FIGS. 1 and 2 illustrate that only one central senseamplification block 220 in a single array block, two or more centralsense amplification blocks may be included in any given single arrayblock.

FIGS. 3A is a plan view and FIG. 3B is a cross-sectional view of thecapacitor block 310 of FIG. 2.

Referring to FIG. 3A, the capacitor block 310 may be formed by arranginga plurality of landing pads (LPs) 311 and a plurality of dummy storagepolysilicons (hereinafter, referred to as polys) (Dummy SPs) 312 a and312 b and storage polys SPs 313 thereon. Bitlines BL0 and BL1 (namely,314 a and 314 b) may be located on the right side of dummy SPs. Forexample, a capacitor 315 included in the capacitor block 310 may belocated between the dummy SPs 312 a and 312 b.

Referring to FIG. 3B, LPs 316 a, 316 b, and 316 c are disposed below thedummy SPs 312 a and 312 b and the SPs 313. The SPs 313 between the dummySPs 312 a and 312 b is located over the LP 316 b, and a buried contact(BC) 317 is located below the LP 316 b. The BC 317 is located over onepart of a self-aligned contact (SAC) 318, and a direct contact (DC) 319is located over the other part of the SAC 318. The bit line (BL0) 314 ais located over the DC 319 to be connected to the DC 319. According toone particular embodiment of the inventive concept, a dummy cell may beremoved from the edge of the array block, and the SP 313 connected tothe bitline 314 a may then function as a balancing element that replacesa capacitance formed by the structure of the dummy cell.

FIGS. 4A is a circuit diagram and FIG. 4B is a layout diagram furtherillustrating the semiconductor memory device 10 of FIG. 1.

Referring to FIG. 4A, the edge sense amplification block 210 disposedadjacent to the capacitor block 310 includes a plurality of SAs 210_1through 210_m. A single memory cell block (e.g., a first memory cellblock (MB1) 110) includes a plurality of memory cell arrangements 110_1,110_1, . . . , 110_n−1, and 110_n. The central sense amplification block220 includes a plurality of SAs 220_1, . . . , and 220_m. Each SA of theedge sense amplification block 210 (e.g., the m-th SA 210_m) includes abitline 214 a and a complementary bitline 214 b, and a PMOSamplification circuit (PMOS SA) 211 a, a column selection circuit 212,an NMOS amplification circuit (NMOS SA) 211 b, and an equalizationcircuit 213 connected between the bitline 214 a and the complementarybitline 214 b.

The complementary bitline 214 b is connected to a capacitor 310_m forcapacitive balancing purposes. The bitline 214 a is connected to onememory cell arrangement of the first memory cell block 110 (e.g., the(n−1)th memory arrangement 110_n−1). The (n−1)th memory arrangement110_n−1 includes a plurality of memory cells. Each SA of the centralsense amplification block 220 (e.g., the m-th SA 220_m) includes abitline 224 a and a complementary bitline 224 b, and a PMOSamplification circuit (PMOS SA) 221 a, a column selection circuit 222,an NMOS amplification circuit (NMOS SA) 221 b, and an equalizationcircuit 223 connected between the bitline 224 a and the complementarybitline 224 b.

The complementary bitline 224 b is connected to one memory cellarrangement of the first memory cell block 110 (e.g., the n-th memoryarrangement 110_n). The bitline 224 a is also connected to a memory cellarrangement in another memory cell block (e.g., a memory cell block (notshown) located on the right side of the first memory cell block 110).The edge sense amplification block 210 and the central senseamplification block 220 are, thus, symmetrical about the first memorycell block 110. When the bitline 214 a and the complementary bitline 214b are located on both sides of the PMOS and NMOS amplification circuitsof the sense amplification block 210_m as illustrated in FIG. 4A, thisis typically referred to as an open bitline sense amplification memorystructure.

During equalization and pre-charging of the bitline 214 a and thecomplementary bitline 214 b, the time duration required for the voltageof the bitline 214 a and the complementary bitline 214 b to become a VBLvoltage (e.g., ½ of a voltage provided to the memory arrangement, andhereinafter referred to as “tRP”) may have different values in the caseof a capacitance imbalance verse a case of capacitance balance. Forexample, the duration tRP is greater when a dummy cell block on the edgeof an array block is removed (i.e., in the case of a capacitanceimbalanced) than when the dummy cell block on the edge is not removed(i.e., in the case of a capacitance balance). These different durationstRP may result in the deterioration of certain performancecharacteristics for memory operation. In order to prevent a capacitanceimbalance between the bitline 214 a and the complementary bitline 214 bdue to the removal of the dummy cell block from the edge of an arrayblock, the complementary bitline 214 b of the m-th SA 210_m of the edgesense amplification block 210 is connected to the capacitor 310_m in thecapacitor block 310.

In every semiconductor process, certain process deviations willtypically arise. In other words, when different capacitors are formedusing various semiconductor process(es), the respective capacitances mayvary and may not precisely balance a connected bitline. Whencapacitances vary, a loss of duration tRP characteristics may begenerated during precharging, as compared with an ideal circuit whereincapacitances are exactly equal. To address this problem, at least one ofa plurality of transistors included in the m-th SA 210_m of the edgesense amplification block 210 may be designed with a different size thana corresponding transistor of the m-th SA 220_m of the central senseamplification block 220.

Accordingly, in the example of FIG. 4A, a transistor of the equalizationcircuit 213 included in the m-th SA 210_m of the edge senseamplification block 210 is designed to have a different size than thecorresponding transistor of the equalization circuit 223 included in them-th SA 220_m of the central sense amplification block 220. Thetransistor of the equalization circuit 213 of the edge senseamplification block 210 may be designed to have a size greater than thatof the transistor of the equalization circuit 223 of the central senseamplification block 220. This greater sized transistor will increase thedriving capability of the equalization circuit 213 of the edge senseamplification block 210. Alternatively, the greater sized transistorwill allow the level of a threshold voltage for the transistor of theequalization circuit 213 of the edge sense amplification block 210 to beless than that of the corresponding transistor of the equalizationcircuit 223 of the central sense amplification block 220.

FIG. 4B(a) illustrates an embodiment of a transistor of the equalizationcircuit 213 of the edge sense amplification block 210 and FIG. 4(B(b)illustrates an embodiment of a transistor of the equalization circuit223 of the central sense amplification block 220. As described above,the transistor of FIG. 4B(a) included in the equalization circuit 213has a greater size than the transistor of FIG. 4B(b) of the equalizationcircuit 223. In the particular examples of FIG. 4B, the size of thetransistor in the equalization circuit 213 is twice that of thetransistor in the equalization circuit 223. When the transistors of theedge sense amplification block 210 are designed with a different (e.g.,greater) size than those of the central sense amplification block 220,those of ordinary skill in the art will understand than many differentlayout variables (such as those shown in FIG. 4B) may be used torespectively define the transistors.

FIGS. 5A is a circuit diagram of an embodiment in which a transistor ofan amplification circuit in a first SA has a different size from that ofa transistor of an amplification circuit in a second SA. FIG. 5B,inclusive FIGS. 5B(a) and 5B(b), shows graphs illustratingcharacteristics resulting from the difference between the transistorsizes. For convenience of explanation, FIG. 5A illustrates only the m-thSA 210_m of the edge sense amplification block 210 and only the m-th them-th SA 220_m of the central sense amplification block 220.

In the circuit diagram of FIG. 5A, the voltage levels of the bitline 214a and the complementary bitline 214 b become equal due to chargesharing. However, when there is a capacitance imbalance between thebitline 214 a and the complementary bitline 214 b and pre-charge isperformed using a predetermined duration tRP, a deviation between thevoltage level apparent on the bitline 214 a and that apparent on thecomplementary bitline 214 b may arise. That is, in a case of capacitanceimbalance, a VBL level may be greater than a deviation when thecapacitances of the bitline 214 a and the complementary bitline 214 bare balanced. Charge on a bitline and a cell node are shared, and avoltage difference between a bitline and a complementary bitline(hereinafter, referred to as “del VBL”) is generated. However, the delVBL where the deviation is great may be smaller as compared with abalanced case where the deviation is small or not generated at all. Inother words, the del VBL of the edge sense amplification block 210 andthe central sense amplification block 220 may be different from eachother. When the del VBL of the edge sense amplification block 210decreases, sense amplification capabilities of the m-th SA 210_m of theedge sense amplification block 210 may decrease.

To compensate for the decrease of the sense amplification capabilities,the PMOS amplification circuit 211 a and the NMOS amplification circuit211 b of the m-th SA 210_m of the edge sense amplification block 210 maybe designed to have sizes greater than those of the PMOS amplificationcircuit 221 a and the NMOS amplification circuit 221 b of the m-th SA220_m of the central sense amplification block 220. For example, atransistor of the PMOS amplification circuit 211 a of the edge senseamplification block 210 may be designed to have a size greater than thatof a transistor of the PMOS amplification circuit 221 a of the centralsense amplification block 220. Moreover, a transistor of the NMOSamplification circuit 211 b of the edge sense amplification block 210may be designed to have a size greater than that of a transistor of theNMOS amplification circuit 221 b of the central sense amplificationblock 220.

In each of the PMOS amplification circuit 211 a and the NMOSamplification circuit 211 b, a threshold voltage Vth of a transistor mayvary as the result of process variations during fabrication. Thevariation of the threshold voltage Vth may cause the sensing capabilityof each of the PMOS and NMOS amplification circuits 211 a and 211 b tobe reduced. In other words, when the variation of the threshold voltageVth decreases, the sensing capability of each of the PMOS and NMOSamplification circuits 211 a and 211 b increases. Accordingly, a methodfor reducing the variation of the threshold voltage Vth is required. Forexample, the variation of the threshold voltage Vth may be reduced usinga method of increasing the size of a transistor of a SA, therebyincreasing the sensing capability of each of the PMOS and NMOSamplification circuits 211 a and 211 b. Thus, the reduction of thesensing capability due to a deviation caused by capacitance imbalanceand a del VBL loss caused by the deviation may be compensated.

FIG. 5B(a) is a graph showing a decrease in mismatch according to thesize of an amplification circuit, and a variation in a del VBL gaincaused by the mismatch decrease. As the width of a gate of a transistorin a SA increases 1 time, 2 times, 3 times, and 4 times a referencewidth Ref as in Ref, W2X, W3X, and W4X, respectively, on the horizontalaxis of the graph of FIG. 5B(a), the del VBL gain increases from 0 to16, 23, and 27 as shown on the vertical axis.

FIG. 5B(b) is a graph showing del VBL loss according to a ratio of anoverall capacitance Cbal of the complementary bitline 214 b included inthe m-th SA 210_m of the edge sense amplification block 210 andconnected to the balance capacitor 310_m to an overall capacitance Cblof the bitline 214 a included in the m-th SA 210_m of the edge senseamplification block 210 and connected to the memory arrangement 110_n−1of the memory cell block 110. Referring to FIG. 5B, when the del VBLgain when the sizes of the gates of the transistors of the amplificationcircuits 211 a and 211 b of the m-th SA 210_m are twice (W2X) is 16 mV,a del VBL margin of “a” for mismatch between the bitline 214 a and thecomplementary bitline 214 b may be secured.

FIG. 6 is a circuit diagram further illustrating an embodiment of theinventive concept in which transistors of column selection circuits ofsense amplification blocks have different sizes. For convenience ofexplanation, FIG. 6 illustrates only the m-th SA 210_m of the edge senseamplification block 210 and only the m-th the m-th SA 220_m of thecentral sense amplification block 220.

The m-th SA 210_m of the edge sense amplification block 210 may alsoinclude the column selection circuit 212 in addition to the equalizationcircuit 213 and the PMOS and NMOS amplification circuits 211 a and 211b. In order to increase the driving capability of the m-th SA 210_m ofthe edge sense amplification block 210, the size of a transistorincluded in the column selection circuit 212 of the m-th SA 210_m may beincreased to be greater than that of a transistor included in the columnselection circuit 222 of the m-th SA 220_m of the central senseamplification block 220. Accordingly, the sense amplification capabilityof the edge sense amplification block 210 increases.

FIG. 7 is a block diagram of a semiconductor memory device 10 accordingto another embodiment of the inventive concept.

If capacitance imbalance exists between the bitline 214 a and thecomplementary bitline 214 b, a predetermined number of accesses to theedge sense amplification block 210 in which imbalance is generated mayaffect the level of a precharge voltage. Accordingly, when the centralsense amplification block 220 is then accessed, loss of duration tRPcharacteristics for the central sense amplification block 220 may begenerated. To address this problem, as shown in FIG. 7, a prechargevoltage (e.g., a first precharge voltage VBL1) provided to the edgesense amplification block 210 may be differently defined than aprecharge voltage (e.g., a second precharge voltage VBL2) provided tothe central sense amplification block 220. To achieve this differentvoltage definition, a precharge voltage generation unit 410 generatingthe first precharge voltage VBL1 (hereinafter, referred to as a firstprecharge voltage generation unit 410) and a precharge voltagegeneration unit 420 generating the second precharge voltage VBL2(hereinafter, referred to as a second precharge voltage generation unit420) may be separately included in the semiconductor memory device 10.

Two edge sense amplification blocks 210 and 230 exist for each of aplurality of array blocks included in the semiconductor memory device10. Accordingly, as many first precharge voltages VBL1 as 2^(N) (where“N” is the number of array blocks) may be generated. If first prechargevoltages VBL1 are generated in the same precharge voltage generationunit as are commonly provided to all array blocks, only the firstprecharge voltage generation unit 410 instead of the first and secondprecharge voltage generation units 410 and 420 may be included in thesemiconductor memory device 10. On the other hand, if at least two arrayblocks are provided with the first precharge voltages VBL1 via differentpaths or two first sense amplification blocks 210 and 230 included in asingle array block are provided with the first precharge voltages VBL1via different paths, a plurality of first precharge voltage generationunits 410 may be included in the semiconductor memory device 10.

As illustrated in FIG. 7, the first precharge voltage generation unit410 generates the first precharge voltage VBL1 and provides the same tothe edge sense amplification blocks 210 and 230 from among the senseamplification blocks included in the semiconductor memory device 10. Thesecond precharge voltage generation unit 420 generates the secondprecharge voltage VBL2 and provides the same to the central senseamplification blocks 220 and 240 from among the sense amplificationblocks included in the semiconductor memory device 10. The capacitorblocks 310 and 320 of FIG. 7 (hereinafter, referred to as firstcapacitor blocks) are connected to the first sense amplification blocks210 and 230, respectively, arranged on the edge of an array block. Inother words, the edge sense amplification blocks 210 and 230 and thecentral sense amplification blocks 220 and 240 may receive the firstprecharge voltage VBL1 and the second precharge voltage VBL2,respectively, via different paths, and the first precharge voltage VBL1and the second precharge voltage VBL2 may have different voltage levelsor the same voltage level.

FIG. 8 is a block diagram further illustrating a variation on theembodiment of the inventive concept shown in FIG. 7.

As illustrated in FIG. 8, a switch 430 for electrically connecting thefirst precharge voltage generation unit 410 and the second prechargevoltage generation unit 420 may be further included in the semiconductormemory device 10 of FIG. 7. For example, a transmission path of thefirst precharge voltage VBL1 generated in the first precharge voltagegeneration unit 410 may be electrically connected to a transmission pathof the second precharge voltage VBL2 generated in the second prechargevoltage generation unit 420 by the switch 430. The ON/OFF operation ofthe switch 430 may be controlled according to a switch control signal,and the switch control signal may be a signal synchronized with aprecharge command (CMD). Accordingly, the switch 430 may be turned OFFfor a predetermined period of time in response to the precharge CMD ormay be turned OFF for a predetermined period of time corresponding to aprecharge duration. Accordingly, the first precharge voltage VBL1 andthe second precharge voltage VBL2 are prevented from affecting eachother during precharge, the first precharge voltage VBL1 and the secondprecharge voltage VBL2 are connected to each other by turning on theswitch 430 after the precharge is concluded, and consumption ofunnecessary current is prevented by disabling the first prechargevoltage generation unit 410.

FIGS. 9A and 9B are respectively circuit diagrams further illustratingcertain embodiments of the first and second precharge voltage generationunits 410 and 420 illustrated in FIG. 8. As illustrated in FIGS. 9A and9B, the first precharge voltage generation unit 410 and the secondprecharge voltage generation unit 420 each may include a reference unit,a comparison unit, and a driver unit. In FIG. 9A, the first prechargevoltage generation unit 410 includes a reference unit 411, a comparisonunit 412, and a driver unit 413. In FIG. 9B, the second prechargevoltage generation unit 420 includes a reference unit 421, a comparisonunit 422, and a driver unit 423. At least one switch, namely, switches415 and 416, for controlling the first precharge voltage generation unit410 to be enabled or disabled may be further included in the firstprecharge voltage generation unit 410. At least one switch 425 forcontrolling the second precharge voltage generation unit 420 to beenabled or disabled may be further included in the second prechargevoltage generation unit 420.

In order to decrease a response time of the comparison unit 412 of thefirst precharge voltage generation unit 410, the size of the firstprecharge voltage generation unit 410 may be designed to be greater thanthat of the second precharge voltage generation unit 420. For example,the size of the comparison unit 412 of the first precharge voltagegeneration unit 410 may be designed to be greater than that of thecomparison unit 422 of the second precharge voltage generation unit 420.Alternatively, the comparison unit 412 of the first precharge voltagegeneration unit 410 may be designed to have a different type from thecomparison unit 422 of the second precharge voltage generation unit 420.FIGS. 9A and 9B illustrate that the comparison units 412 and 422 are alldifferential source amplifiers. A latch-type comparator (not shown) maydecrease the response time, compared with the differential sourceamplifier, and thus the comparison unit 412 of the first prechargevoltage generation unit 410 may be a latch-type comparator.

In order to improve the driving capability of the first prechargevoltage generation unit 410, the switches 415 and 416 may be furtherincluded in the first precharge voltage generation unit 410, asdescribed above. For example, the switch 415 in addition to the switch416 being switched by a power supply voltage may be further included inthe first precharge voltage generation unit 410. The switch 415 may beturned ON when the first sense amplification blocks 210 and 230 areactivated, and may be turned OFF to prevent current consumption, whenthe first sense amplification blocks 210 and 230 are deactivated. Toachieve this ON/OFF operation, the switch 415 may be switched inresponse to pre-charge information or block information. In other words,the switch 415 may be turned ON during a predetermined prechargeduration according to the pre-charge information. Alternatively, theswitch 415 may be turned ON when the first sense amplification blocks210 and 230 are precharged, according to the block information.

FIG. 9C illustrates another embodiment of the first precharge voltagegeneration unit 410 of the semiconductor memory device 10 illustrated inFIG. 8. The first precharge voltage generation unit 410 of FIG. 9C mayinclude a plurality of driver units 413, and the plurality of the driverunits 413 may be installed in each of the first sense amplificationblocks 210 and 230, as illustrated in FIG. 9C. That is, the driver units413 may be separately arranged to correspond to the SAs, respectively,of each of the first sense amplification blocks 210 and 230. FIG. 9Cillustrates an example in which the driver units 413 are separatelyarranged to correspond to SAs, respectively.

As described above, the first precharge voltage generation unit 410 maybe separately arranged to correspond to the edge sense amplificationblocks 210 and 230, respectively. In this case, the comparison unit 412and the driver unit 413 shown in FIG. 9A may be arranged to correspondto each of the edge sense amplification blocks 210 and 230.Alternatively, the comparison unit 412 may be arranged to correspond toeach of the edge sense amplification blocks 210 and 230, and the driverunit 413 may be arranged to correspond to each of the SAs of each of theedge sense amplification blocks 210 and 230. The reference units 411 and421 of FIGS. 9A and 9B may be identical with each other, and thus may beshared by the first and second precharge voltage generation units 410and 420. Although not illustrated, as described above, the referenceunit 411, the comparison unit 412, and the driver unit 413 of the firstprecharge voltage generation unit 410 may be arranged in variousconfigurations within the semiconductor memory device 10.

FIG. 10A is a circuit diagram of an embodiment of the inventive conceptshowing a semiconductor memory device including a second capacitor block330 connected to the equalization circuits 213 and 223.

When the first precharge voltage VBL1 is provided to the edge senseamplification block 210 and the second precharge voltage VBL2 isprovided to the central sense amplification block 220, a capacitanceelectrically connected to the first precharge voltage VBL1 may be lessthan that electrically connected to the second precharge voltage VBL2.For example, although FIG. 10A illustrates a single central senseamplification block 220, a plurality of second sense amplificationblocks (not shown) may be included in an actual array block, and thesecond precharge voltage VBL2 may be provided to the plurality of secondsense amplification blocks. Accordingly, a capacitance imbalance may begenerated between first and second equalization circuits, namely, theequalization circuits 213 and 223 receiving the first and secondprecharge voltages VBL1 and VBL2, respectively, and this capacitanceimbalance needs to be compensated. To achieve compensation, the secondcapacitor block 330 connected to the edge sense amplification block 210may be further included in the semiconductor memory device 10. Thesecond capacitor block 330 may include a plurality of capacitors 330_1,. . . , and 330_m, wherein the number of capacitors 330_1, . . . , and330_m may be the same as the number of SAs 210_1, . . . , and 210_m(hereinafter, referred to as first SAs) included in the edge senseamplification block 210, and each capacitor (e.g., the m-th balancecapacitor 330_m) may be connected to the equalization circuit 213 ofeach first SA (e.g., the m-th SA 210_m).

FIG. 10B is a graph showing the results obtained by this use of thesecond capacitor block 330 in the embodiment illustrated in FIG. 10A.

The vertical axis of FIG. 10B indicates del VBL loss, and the horizontalaxis denotes a ratio of an overall capacitance Cbal of a complementarybitline connected to a second capacitor to an overall capacitance Cbl ofa bitline not connected to the second capacitor. In the present graph,when the second capacitor is used, the angle of a V shape increases.Accordingly, when the second capacitor is used, del VBL loss generatedduring precharge when the overall capacitance Cbal of the complementarybitline and the overall capacitance Cbl of the bitline are imbalancedmay be reduced.

FIG. 11A is a plan view of an embodiment of a semiconductor layout of asecond capacitor block 500.

A signal line 327 for transmitting the first precharge voltage VBL1, andan a-th second capacitor 330_a are sequentially located in a directionfrom point C to point D. The second capacitor 330_a includes a pluralityof SPs 321 a, 321 b, and 321 c. A plurality of first capacitors and aplurality of second capacitors may alternate with each other in adirection perpendicular to a C-D direction. For example, an a-th firstcapacitor 310_a may be disposed between an (a−1)th second capacitor330_a−1 and an a-th second capacitor 330_a. The a-th second capacitor330_a may be disposed between the a-th first capacitor 310_a and an(a+1)th first capacitor 310_a+1. In other words, by alternating thesecond capacitors 330_a−1, 330_a, . . . , and the like with the firstcapacitors 310_a, 310_a+1, . . . , and the like, the area of asemiconductor layout may be prevented from increasing even when thesecond capacitors 330_a−1, 330_a, . . . , and the like are additionallyincluded.

FIG. 11B is a cross-sectional view of the semiconductor layout of thesecond capacitor block 500 of FIG. 11A.

A BC 324 is located below the signal line 327 for transmitting the firstprecharge voltage VBL1, and an SAC 325 is located below the DC 324. ABC324 is located over the SAC 325, and an LP 323 is located over the BC324. The SPs 321 a, 321 b, and 321 c are arranged on the LP 323. Thesecond capacitor 330_a is formed of the SPs 321 a, 321 b, and 321 c.

FIG. 12 is a block diagram of another embodiment of the inventiveconcept showing a semiconductor memory device 10 including the first andsecond precharge voltage generation units 410 and 420 and secondcapacitor blocks 330 and 340.

Referring to FIG. 12, the semiconductor memory device 10 includes edgememory blocks 110 and 130 respectively located proximate an edge of anarray block and central memory blocks 120_1 and 120_2 located within aninner portion (non-edge) of the array block, edge sense amplificationblocks 210 and 230, and central sense amplification blocks 220_1 and220_2. First capacitor blocks 310 and 320 may be respectively connectedto the edge sense amplification blocks 210 and 230 in order to achievecapacitance balance between a bitline and a complementary bitline, andthe second capacitor blocks 330 and 340 may be respectively connected tothe edge sense amplification blocks 210 and 230 in order to achievecapacitance balance between equalization circuits (not shown) includedin the first sense amplification blocks 210 and 230 and equalizationcircuits (not shown) included in the second sense amplification blocks220_1 and 220_2. The semiconductor memory device 10 may further includethe first precharge voltage generation unit 410 for providing the firstsense amplification blocks 210 and 230 with the first precharge voltageVBL1, the second precharge voltage generation unit 420 for providing thesecond sense amplification blocks 220_1 and 220_2 with the secondprecharge voltage VBL2, and the switch 430 for electrically connectingthe first precharge voltage VBL1 to the second precharge voltage VBL2.

A plurality of capacitors included in the second capacitor blocks 330and 340, which may be referred to as decoupling capacitors (D-Cap), areconnected to SAs included in the edge sense amplification blocks 210 and230, respectively. The capacitors included in the second capacitorblocks 330 and 340 are connected to the equalization circuits (notshown) included in the first sense amplification blocks 210 and 230. Thefirst precharge voltage VBL1 generated by the first precharge voltagegeneration unit 410 is provided to the edge sense amplification blocks210 and 230 and the second capacitor blocks 330 and 340. The switchingoperation of the switch 430 may be controlled according to pre-chargeCMD information. For example, the switch 430 may be turned OFF for apredetermined period of time in synchronization with a precharge CMD,and may be turned ON after a precharge operation is concluded.Accordingly, the second capacitor blocks 330 and 340 are connected tothe first precharge voltage generation unit 410 in response to thepre-charge CMD information, and are connected to the second prechargevoltage generation unit 420 as the switch 430 is turned ON after theprecharge operation.

FIG. 13 is a block diagram of a semiconductor memory device 20 accordingto another embodiment of the inventive concept. Referring to FIG. 13,the semiconductor memory device 20 comprises a plurality of arrayblocks. Each of the array blocks includes at least one memory block andat least one sense amplification block. The memory block may include aplurality of memory cells, and the sense amplification block may includea plurality of SAs. As before, a memory block disposed on the edge ofeach array block is referred to as a edge memory block, and a memoryblock disposed within the portion of each array block is referred to asa central memory block. Again as before, a sense amplification blockdisposed on the edge of each array block is referred to as a edge senseamplification block, and a sense amplification block disposed within theinner portion of each array block is referred to as a central senseamplification block.

The semiconductor memory device 20 has an open BLSA structure, and thusa dummy cell on one side of the edge sense amplification block disposedon the edge of each array block from among the sense amplificationblocks included in the array block is removed. When the dummy cell isremoved from the semiconductor memory device 20, a capacitance imbalancemay occur between a bitline BL and a complementary bitline BLB.Accordingly, a capacitor block is arranged within the semiconductormemory device 20 in order to compensate the capacitance imbalance.

For example, a first SA included in the edge sense amplification blockmay be connected between a bitline and a complementary bitline, thebitline may be connected to a memory cell of the first memory block, andthe complementary bitline may be connected to a capacitor included inthe capacitor block. It is desirable that the capacitance value of thecapacitor connected to the complementary bitline is equal to the amountof capacitance applied to the bitline due to the memory cell. However,it is difficult to exactly equalize the capacitance value of thecapacitor to the amount of capacitance applied to the bitline, during asemiconductor process. Accordingly, when capacitance imbalance occursbetween the bitline and the complementary bitline, the performance ofthe precharge operation degrades.

According to the certain embodiments of the inventive concept, a balanceswitch block is included in each array block in order to reduce thedegradation of the performance of the precharge operation. The balanceswitch block electrically connects either a first bitline or a firstcomplementary bitline to either a second bitline or a secondcomplementary bitline. The balance switch block may electrically connecteither the first bitline or the first complementary bitline to eitherthe second bitline or the second complementary bitline, after apredetermined period of time after a precharge operation for bitlinesstarts. When the first bitline and the first complementary bitline areconnected to the first SA located on the edge of each memory array, thefirst bitline and the first complementary bitline may not exactly reacha precharge voltage due to capacitance imbalance therebetween during theprecharge operation. On the other hand, when the second bitline and thesecond complementary bitline are connected to the second SA located onthe inner side of each memory array, the second bitline and the secondcomplementary bitline reach a voltage that is the same as or almostsimilar to the precharge voltage during the precharge operation. Due tothe inclusion of the balance switch block, the voltages of the secondbitline and the second complementary bitline affect the voltages of thefirst bitline and the first complementary bitline, so that the voltagesof the first bitline and the first complementary bitline are close tothe precharge voltage.

As illustrated in FIG. 13, two edge sense amplification blocks areincluded in each array block so as to be arranged on both edges of thearray block. Two edge memory blocks may also be included in each arrayblock so as to be arranged on both edges of the array block. In thiscase, the balance switch block may be arranged to correspond to each ofthe two edge sense amplification blocks.

A more detailed structure of the semiconductor memory device 20 of FIG.13 will now be described with reference to FIG. 14. FIG. 14 is a blockdiagram of a single array block included in the semiconductor memorydevice 20 of FIG. 13.

Referring to FIG. 14, an edge sense amplification block 600 is disposedon the edge of the array block of the semiconductor memory device 20,and includes at least one first SA (not shown). One of the first SAssenses a voltage difference between a bitline BL2 and a complementarybitline BLB2, and another first SA senses a voltage difference between abitline BL4 and a complementary bitline BLB4. The bitlines BL2 and BL4are connected to memory cells included in a first memory block 500(shown as 100), and the complementary bitlines BLB2 and BLB4 areconnected to capacitors included in a capacitor block 800.

A central sense amplification block 700 is disposed on the inner side ofthe array block and includes at least one second SA (not shown). Eachsecond SA may be connected between a predetermined bitline and apredetermined complementary bitline. For example, a bitline BL1connected to the second SA may be connected to the memory cells includedin the first memory block 500, and a complementary bitline BLB1 may beconnected to memory cells included in a central memory block (not shown)located on the inner side of the array block. The value of a capacitanceapplied to the bitline BL2 due to the memory cells included in the firstmemory block 500 should be equal to the value of a capacitance of acapacitor included in the capacitor block 800, but a difference betweenthe values of the capacitance applied to the bitline BL2 and thecapacitance of the capacitor included in the capacitor block 800 may begenerated due to an error that may be generated during a semiconductorprocess. However, since the bitline BL1 and the complementary bitlineBLB1 are connected to the memory cells of the first memory block 500 andthe second memory block, respectively, which are formed by the sameprocess, the values of capacitances applied to the bitline BL1 and thecomplementary bitline BLB1 are the same as or similar to each other.

A balance switch block 900 may include a plurality of balance switches(not shown). Each of the balance switches electrically connects either abitline or a complementary bitline that are connected to the first SA toeither a bitline or a complementary bitline that are connected to thesecond SA. For example, each balance switch is turned ON in response toa predetermined control signal (for example, a balance control signal),to electrically connect the second bitline BL2 connected to the first SAto the first bitline BL1 connected to the second SA.

During the precharge operation of the semiconductor memory device 20,the bitlines within the array block are precharged with the prechargevoltage. Since an error may be generated to the values of thecapacitances applied to the second bitline BL2 and the secondcomplementary bitline BLB2 connected to the first SA, such capacitanceimbalance affects a precharge time, and an error is generated between avoltage level of the bitline and the complementary bitline connected thefirst SA according to the precharge operation and the precharge voltage.Accordingly, a predetermined period of time after the prechargeoperation, the error between the voltage level of the second bitline BL2and the second complementary bitline BLB2 and the precharge voltage isrelatively large, whereas the error between the voltage level of thefirst bitline BL1 and the first complementary bitline BLB1 and theprecharge voltage is relatively small. A switch of the balance switchblock 900 is turned ON after a predetermined period of time in order toelectrically connect the second bitline BL2 with the first bitline BL1and to allow a voltage applied to the first bitline BL1 to affect thevoltage level of the second bitline BL2. Accordingly, the voltage levelof the second bitline BL2 approximates to the precharge voltage, and thevoltage level of the second complementary bitline BLB2 electricallyconnected to the second bitline BL2 also approximates to the prechargevoltage.

FIG. 15 is a circuit diagram further illustrating the embodiment of thesemiconductor memory device 20 of FIG. 14. An exemplary operation of thesemiconductor memory device 20, according to an embodiment of theinventive concept, will now be described with reference to FIGS. 14 and15.

The edge memory block 500 includes a plurality of memory cells 510, 520,. . . , and the like, and the edge sense amplification block 600includes a plurality of first SAs 610, 620, . . . , and the like inorder to perform data writing/reading with respect to the memory cells510, 520, . . . , and the like. The first SAs 610, 620, . . . , and thelike may include amplification circuits 611, 621, . . . , and the like,respectively, for sensing a voltage difference between bitlines andcomplementary bitlines, and precharge circuits 612, 622, . . . , and thelike, respectively, for precharging the bitlines and the complementarybitlines. Referring to FIG. 15, the first SA 610 is connected between asecond bitline BL2 and a second complementary bitline BLB2, and includesthe amplification circuit 611 and the precharge circuit 612. Theprecharge circuit 612 includes at least one transistor and provides aprecharge voltage VBL to the second bitline BL2 and the secondcomplementary bitline BLB2 in response to a precharge control signalPEQUB1 so as to precharge the second bitline BL2 and the secondcomplementary bitline BLB2 with the precharge voltage VBL.

The first SAs 610, 620, . . . , and the like are connected to aplurality of capacitors 810, 820, . . . , and the like, respectively,included in the capacitor block 800. A bitline or a complementarybitline which are connected to each first SA is connected to a capacitorof the capacitor block 800. For example, the capacitor 810 is connectedto an end of the complementary bitline BLB2 which is connected to thefirst SA 610. The first SA 610 senses a voltage difference between thesecond bitline BL2 and the second complementary bitline BLB2 and readsdata from the memory cell 510.

As described above, the balance switch block 900 includes a plurality ofbalance switches 910, 920, . . . , and the like, and the balanceswitches 910, 920, . . . , and the like are arranged to correspond tothe first SAs 610, 620, . . . , and the like, respectively. For example,the balance switch 910 is disposed to correspond to the first SA 610.The balance switches 910, 920, . . . , and the like may be MOStransistors, and are switched in response to a balance control signalPEQIJB2. For example, the balance switch 910 is turned on in response tothe predetermined control signal PEQIJB2 and electrically connects thefirst bitline BL1 to the second bitline BL2. In other words, the firstSA 610 senses a voltage difference between the second bitline BL2 andthe second complementary bitline BLB2, a second SA (not shown) adjacentto the first SA 610 senses a voltage difference between the firstbitline BL1 and the first complementary bitline BLB1, and the balanceswitch 910 connects a bitline connected to the first sense amplifier 610to a bitline connected to the second SA. Accordingly, during a prechargeoperation with respect to bitlines, the voltages of the second bitlineBL2 and the second complementary bitline BLB2 are changed according tothe voltages applied to the first bitline BL1 and the firstcomplementary bitline BLB1.

The bitlines in the array block are precharged in response to theprecharge control signal PEQUB1. Accordingly, to make the voltage levelsof the bitlines connected to the first SAs 610, 620, . . . , and thelike according to the precharge operation approximate to the prechargevoltage VBL, the balance control signal PEQIJB2 for controlling thebalance switch block 900 may be synchronized with the precharge controlsignal PEQUB1. For example, when a predetermined period of time lapsesafter the precharge operation is performed, an error exists between thevoltage level of the bitlines connected to the first SAs 610, 620, . . ., and the like and the precharge voltage VBL, whereas the voltage levelof the bitlines connected to the second SAs (not shown) and theprecharge voltage VBL are equal to each other or have a relatively smallerror therebetween. As described above, after the voltage level of thebitlines connected to the second SAs (not shown) is stabilized after thelapse of the predetermined period of time, the bitlines connected to thefirst SAs 610, 620, . . . , and the like are connected to the bitlinesconnected to second SAs (not shown), respectively. To achieve this, thebalance control signal PEQIJB2 for controlling the balance switch 510may have a phase obtained by delaying the precharge control signalPEQIJB1 for a predetermined period of time.

Referring to FIGS. 14 and 15, the balance switch block 900 and the edgesense amplification block 600 are separate components. However, thepresent inventive concept is not limited thereto, and the edge senseamplification block 600 may include balance switches. In other words,the first SA 610 included in the edge sense amplification block 600 mayinclude the balance switch 910 in addition to the amplification circuit611 and the precharge unit 612. The balance switch 910 included in theedge sense amplifier 610 may be electrically connected to one bitlineconnected to the second SA (not shown) adjacent to the first SA 610.

FIGS. 16A, 16B, and 16C are circuit diagrams further illustratingcertain embodiments of the balance switch block 900. Referring to FIG.16A, the first sense amplification block 600 includes a plurality offirst SAs 610, 620, 630, . . . , and the like, and the central senseamplification block 700 includes a plurality of second SAs 710, 720,730, . . . , and the like. A plurality of balance switches 910, 920, . .. , are included in the balance switch block 900 to correspond to thefirst SAs 610, 620, 630, . . . , and the like, respectively, and thesecond SAs 710, 720, 730, . . . , and the like, respectively.

The first SA 610 is connected between the second bitline BL2 and thesecond complementary bitline BLB2, the first SA 620 is connected betweenthe fourth bitline BL4 and the fourth complementary bitline BLB4, andthe first SA 630 is connected between the sixth bitline BL6 and thesixth complementary bitline BLB6. The second SA 710 is connected betweenthe first bitline BL1 and the first complementary bitline BLB1, thesecond SA 720 is connected between the third bitline BL3 and the thirdcomplementary bitline BLB3, and the second SA 730 is connected betweenthe fifth bitline BL5 and the fifth complementary bitline BLB5. Avoltage level obtained a predetermined period of time after prechargingthe bitline pairs BL2-BLB2, BL4-BLB4, and BL6-BLB6 connected to thefirst SAs 610, 620, and 630 may be different from the level of theprecharge voltage VBL. When the balance control signal PEQIJB2 isactivated, the first bitline BL1 and the second bitline BL2 areelectrically connected to each other. Also, the third bitline BL3 andthe fourth bitline BL4 are electrically connected to each other, and thefifth bitline BL5 and the sixth bitline BL6 are electrically connectedto each other. The voltage levels of the first, third, and fifthbitlines BL1, BL3, and BL5 affect the bitline pairs BL2-BLB2, BL4-BLB4,and BL6-BLB6 connected to the first SAs 610, 620, and 630, and thus thevoltage levels of the bitline pairs BL2-BLB2, BL4-BLB4, and BL6-BLB6approximate to the level of the precharge voltage VBL. Accordingly, thetime taken to precharge the bitlines connected to the edge senseamplification block 600 may be reduced, and memory operation performancemay be improved by making a voltage level of the bitlines obtained bythe precharge operation approximate to the precharge voltage VBL.

FIG. 16B illustrates a case where a edge sense amplification block isarranged on either side of an array block. A first SA 610A located onthe left edge of the array block, and a first SA 610B located on theright edge of the array block may be included in the array block.Referring to FIG. 16B, the first SA 610A is connected between a secondbitline BL2 and a second complementary bitline BLB2, and the first SA610B is connected between an n-th bitline BLn and an n-th complementarybitline BLBn. The second bitline BL2 is connected to a memory cell (MC),and the second complementary bitline BLB2 is connected to a capacitor810A. The n-th bitline BLn is connected to a MC, and the n-thcomplementary bitline BLBn is connected to a capacitor 810B.

In order to improve the performance of a precharge operation of thebitlines connected to the first SAs 610A and 610B located on the edges,balance switches may also be arranged to correspond to the first SAs610A and 610B located on both edges of the array block, respectively.For example, a balance switch 910A may be disposed to correspond to thefirst SA 610A, and a balance switch 910B may be disposed to correspondto the first SA 610B. The balance switches 910A and 910B may be commonlycontrolled according to the balance control signal PEQIJB2. When thebalance switch 910A is turned ON, the voltage level of the first bitlineBL1 and the first complementary bitline BLB1 affects the voltage levelof the second bitline BL2 and the second complementary bitline BLB2.When the balance switch 910B is turned ON, the voltage level of the(n−1)th BL(n−1) and the (n−1)th complementary bitline BLB(n−1) affectsthe voltage level of the n-th bitline BLn and the n-th complementarybitline BLBn.

FIG. 16C, inclusive of FIGS. 16C(a) and 16C(b), is a circuit diagram ofvarious embodiments of connection between balance switches and bitlines.As illustrated in FIG. 16C(a), the second bitline BL2 or the secondcomplementary bitline BLB2 which are connected to the first SA 610located on the edge may be connected to one bitline of a bitline pairadjacent to the second bitline BL2 and the second complementary bitlineBLB2 (for example, a first bitline pair BL1-BLB1). To achieve thisconnection, two or more balance switches 911 and 912 may be arranged,and the balance switches 911 and 912 may be connected parallel to eachother between the bitlines. For example, although FIG. 16C illustratesthat the two balance switches 911 and 912 c are arranged between thesecond bitline BL2 and the first bitline BL1, the number of balanceswitches arranged may be more than 2.

As illustrated in FIG. 16C(b), the second complementary bitline BLB2 maybe connected to one bitline of the first bitline pair BL1-BLB1. Forexample, FIG. 16C(b) illustrates an example in which the secondcomplementary bitline BLB2 is connected to the first bitline BL1.Although FIG. 16C(b) illustrates only one balance switch 910, two ormore balance switches may be disposed as illustrated in FIG. 16C (a).The balance switch 910 may be connected between the second complementarybitline BLB2 and the first complementary bitline BLB1. Although notillustrated, balance switches may be arranged by combining theembodiments of FIGS. 16C(a) and 16C(b) with each other. For example, abalance switch may be arranged between the first bitline BL1 and thesecond bitline BL2, and at the same time a balance switch may be furtherarranged between the first complementary bitline BLB1 and the secondcomplementary bitline BLB2.

FIGS. 17A and 17B are waveforms of control signals and the voltagelevels of bitlines. As illustrated in FIGS. 17A and 17B, the prechargecontrol signal PEQUB1 for precharging the bitlines of a memory array andthe balance control signal PEQIJB2 for turning on a balance switch mayhave a predetermined phase difference. Since it is desirable that thebalance control signal PEQIJB2 is activated after the bitlines connectedto a second SA stably reaches a precharge voltage level, the balancecontrol signal PEQIJB2 may be activated a predetermined period of timeafter the precharge control signal PEQIJB1 is activated. The duration ofthe precharge operation may generally correspond to several tens ofnanoseconds (ns). In FIG. 17A, the balance control signal PEQIJB2 isactivated 1.3 ns after the precharge control signal PEQIJB1 isactivated.

FIG. 17B illustrates a variation of the voltage levels of the secondbitline BL2 and the second complementary bitline BLB2 connected to thefirst SA. When no balance switches are included, an error may begenerated between the voltage levels of the second bitline BL2 and thesecond complementary bitline BLB2 and the precharge voltage VBL after apredetermined period of time after the precharge operation. Thus, thetime required to perform the precharge operation increases. On the otherhand, when a balance switch is included, the voltage of the firstbitline BL1 and the first complementary bitline BLB1 affects the secondbitline BL2 and the second complementary bitline BLB2 as the balancecontrol signal PEQIJB2 is activated, so that the voltage level of thesecond bitline BL2 and the second complementary bitline BLB2approximates to the precharge voltage VBL within a shorter period oftime.

While the inventive concept has been particularly shown and describedwith reference to exemplary embodiments thereof, it will be understoodthat various changes in form and details may be made therein withoutdeparting from the scope of the following claims.

1. A semiconductor memory device having an open bitline memorystructure, comprising: a memory block comprising a memory cellarrangement; an edge sense amplification block comprising a first senseamplifier comprising a first bitline, a first complementary bitline, anda first amplification circuit comprising a first transistor having afirst size; a central sense amplification block comprising a secondsense amplifier comprising a second bitline, a second complementarybitline, and a second amplification circuit comprising a secondtransistor having a second size different from the first size; and acapacitor block electrically connected to the edge sense amplificationblock.
 2. The semiconductor memory device of claim 1, wherein each ofthe first and second amplification circuits respectively comprises a MOSsense amplifier, an equalization circuit, and a column selectioncircuit.
 3. The semiconductor memory device of claim 2, wherein thefirst transistor is included in the MOS sense amplifier of the firstamplification circuit and the second transistor is included in the MOSsense amplifier of the second amplification circuit, and the first sizeis greater than the second size.
 4. The semiconductor memory device ofclaim 2, wherein the first transistor is included in the equalizationcircuit of the first amplification circuit and the second transistor isincluded in the equalization circuit of the second amplificationcircuit, and the first size is greater than the second size.
 5. Thesemiconductor memory device of claim 2, wherein the first transistor isincluded in the column selection circuit of the first amplificationcircuit and the second transistor is included in the column selectioncircuit of the second amplification circuit, and the first size isgreater than the second size.
 6. The semiconductor memory device ofclaim 1, wherein the first bitline is connected to a memory cellarrangement in an edge memory block adjacent to the edge senseamplification block, and the first complementary bitline is connected toa first capacitor included in the capacitor block, and the secondbitline is connected to one memory cell arrangement included in acentral memory block adjacent to the central sense amplification block,and the second complementary bitline is connected to another memory cellarrangement included in a central memory block.
 7. A semiconductormemory device having an open bitline memory structure, comprising: anedge sense amplification block comprising a first sense amplifierconnected to a first memory cell arrangement of an edge memory block,the first sense amplifier comprising a first equalization circuitconnected to a first power signal; a central sense amplification blockcomprising a second sense amplifier connected to a second memory cellarrangement of the edge memory block, the second sense amplifiercomprising a second equalization circuit connected to a second powersignal; and a power generation device that generates the first powersignal and the second power signal, wherein the first power signal isprovided to the first equalization circuit through a different signalpath than the second power signal is provided to the second equalizationcircuit.
 8. The semiconductor memory device of claim 7, furthercomprising: a first capacitor block electrically connected to the edgesense amplification block and comprising a first capacitor, wherein thefirst sense amplifier comprises a first bitline connected to the firstmemory cell arrangement and a first complementary bitline connected tothe first capacitor.
 9. The semiconductor memory device of claim 8,further comprising: a second capacitor block comprising a secondcapacitor connected to the first equalization circuit.
 10. Thesemiconductor memory device of claim 9, wherein the second capacitor isdisposed at a level below a level at which the first capacitor isdisposed on a semiconductor substrate of the semiconductor memorydevice.
 11. The semiconductor memory device of claim 9, wherein thesecond capacitor is connected to the first power signal.
 12. Thesemiconductor memory device of claim 11, wherein the power generationdevice comprises a driver unit that drives the first power signal, andthe driver unit is arranged to correspond to the first sense amplifier.13. The semiconductor memory device of claim 7, wherein the powergenerating device comprises a first power generating device thatgenerates the first power signal, and a second power generating devicethat generates the second power signal.
 14. The semiconductor memorydevice of claim 13, further comprising: a switch connected between thefirst power generating device and the second power generating device.15. The semiconductor memory device of claim 14, wherein the switch iscontrolled in response to a precharge command.
 16. The semiconductormemory device of claim 13, wherein the first and second power generatingdevices respectively comprises a reference unit, a comparator, and adriver unit.
 17. The semiconductor memory device of claim 16, whereinthe first power generating device further comprises a switch operatingin response to a precharge command.
 18. A semiconductor memory devicecomprising an array block, wherein the array block comprises a pluralityof memory blocks, a plurality of sense amplification blocks, and atleast one capacitor block, the plurality of memory blocks each comprisean edge memory block disposed proximate an edge of the array block, anda central memory block disposed within an inner portion of the arrayblock, and the plurality of sense amplification blocks comprise an edgesense amplification block disposed between the capacitor block and theedge memory block, and a central sense amplification block disposedbetween the edge memory block and the central memory block.
 19. Thesemiconductor memory device of claim 18, further comprising anotheredges sense amplification block arranged between the central memoryblock and a second capacitor block.
 20. The semiconductor memory deviceof claim 18, wherein the edge sense amplification block comprises afirst sense amplifier, and the first capacitor block comprises a firstcapacitor, and the first sense amplifier comprises a first bitlineconnected to a first memory cell arrangement in the edge memory block,and a first complementary bitline connected to the first capacitor. 21.The semiconductor memory device of claim 20, wherein the central senseamplification block comprises a second sense amplifier, the first senseamplifier further comprises a first amplification circuit comprising afirst transistor having a first size, and the second sense amplifiercomprises a second amplification circuit comprising a second transistorhaving a second size different from the first size.
 22. Thesemiconductor memory device of claim 20, wherein the central senseamplification block comprises a second sense amplifier, the first senseamplifier comprises a first equalization circuit comprising a firsttransistor having a first size, and the second sense amplifier comprisesa second equalization circuit comprising a second transistor having asecond size different from the first size.
 23. The semiconductor memorydevice of claim 20, wherein the central sense amplification blockcomprises a second sense amplifier, the first sense amplifier comprisesa first column selection circuit comprising a first transistor having afirst size, and the second sense amplifier comprises a second columnselection circuit comprising a second transistor having a second sizedifferent from the first size.
 24. The semiconductor memory device ofclaim 20, further comprising: a first voltage generation unit thatgenerates a first equalizing voltage and provides the first equalizingvoltage to the edge sense amplification block via a first voltage path;and a second voltage generation unit that generates a second equalizingvoltage and provides the second equalizing voltage to the central senseamplification block via a second voltage path different from the firstvoltage path.
 25. The semiconductor memory device of claim 24, furthercomprising: a switch connected between the first and second voltagepaths, wherein the switch is turned ON for a predetermined period oftime in synchronization with a precharge command provided to thesemiconductor memory device.
 26. The semiconductor memory device ofclaim 24, wherein the first sense amplifier comprises a firstequalization circuit comprising a first transistor having a first size,and the semiconductor memory device further comprises a capacitor blockconnected to the first equalization circuit to control an amount ofcapacitance applied to the first equalization circuit.
 27. Asemiconductor memory device having an open bitline memory structure,comprising: a first sense amplification block arranged on an edge of anarray block and comprising a first sense amplifier connected between afirst bitline and a second bitline; a second sense amplification blockarranged within an inner portion of the array block and comprising asecond sense amplifier connected between a third bitline and a fourthbitline; a capacitor block comprising a capacitor connected to at leastone selected from a group consisting of the first bitline and the secondbitline; and a balance switch block arranged between the first senseamplification block and the second sense amplification block toelectrically connect the at least one selected from the group consistingof the first bitline and the second bitline to at least one selectedfrom another group consisting of the third bitline and the fourthbitline.
 28. The semiconductor memory device of claim 27, wherein thebalance switch block comprises a balance switch that electricallyconnects the second bitline to the third bitline in response to a firstcontrol signal.
 29. The semiconductor memory device of claim 28, whereinthe first sense amplifier comprises: an amplification circuit connectedbetween the first and second bitlines; and a precharge unit connectedbetween the first and second bitlines and precharging the first andsecond bitlines in response to a second control signal.
 30. Thesemiconductor memory device of claim 29, wherein the first controlsignal has a phase obtained by delaying the second control signal for apredetermined period of time.
 31. The semiconductor memory device ofclaim 27, wherein the balance switch block comprises at least onebalance switch which is implemented as a MOS transistor.
 32. A method offabricating a semiconductor memory device on a substrate, the methodcomprising: providing an arrangement of circuit blocks including acapacitor block, an edge sense amplification block, an edge memoryblock, a central sense amplification block, and a central memory block;arranging the capacitor block at an edge of the substrate; arranging thecentral sense amplification block and the central memory block at aninner portion of the substrate; and arranging the edge senseamplification block and the edge memory block between the capacitorblock and the central sense amplification block, wherein the edge senseamplification block comprises a first amplification circuit including afirst transistor having a first size, and the central senseamplification block has a layout configuration substantially the same asthe edge sense amplification block, and comprises a second amplificationcircuit including a second transistor having a position within thesecond amplification circuit corresponding to a position of the firsttransistor within the first amplification circuit and having a secondsize different from the first size.